TGS2352 dc ? 12 ghz high power spdt switch preliminary data sheet: rev a 06/20/11 - 1 of 10 - disclaimer: sub j ect to chan g e without notice ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ? applications ? high power switching product features functional block diagram ? frequency range: dc ? 12 ghz ? input power: up to 20 w ? insertion loss: < 1 db ? isolation: -35 db typical ? switching speed: < 35 ns ? control voltages: 0 v/-40 v from either side of mmic ? dimensions: 1.15 x 1.65 x 0.1 mm 3, 6 vc2 j1 rf in vc1 j2 rf out1 j3 rf out2 5 4 2, 7 1 general description bond pad configuration the triquint TGS2352 is a single-pole, double-throw (spdt) switch. the TGS2352 operates from dc to 12 ghz and is designed using triquint?s 0.25um gan on sic production process. the TGS2352 typically provides up to 20 w input power handling at control voltages of 0/-40 v. this switch maintains low insertion loss 1 db, and high isolation -35 db typical. the TGS2352 is ideally suited for high power switching application. lead-free and rohs compliant bond pad # symbol 1 rf in 2, 7 vc2 3, 6 vc1 4 rf out1 5 rf out2 ordering information part no. eccn description TGS2352 ear99 dc ? 12 ghz high power spdt switch
TGS2352 dc ? 12 ghz high power spdt switch preliminary data sheet: rev a 06/20/11 - 2 of 10 - disclaimer: sub j ect to chan g e without notice ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ? specifications absolute maximum ratings parameter rating control voltage, vc - 50 v control current, ic -1 to 9.8 ma power dissipation, pdiss 5 w rf input power, cw, 50 ? ,t = 25oc 44 dbm channel temperature, tch 275 o c mounting temperature (30 seconds) 320 o c storage temperature -40 to 150 o c operation of this device outsi de the parameter ranges given above may cause permanent damage. these are stress ratings only, and functional opera tion of the device at these conditions is not implied. recommended operating conditions parameter min typical max units vc1 -40 / 0 v vc2 0 / -40 v ic1 / ic2 -0.3 to 0.1 ma electrical specifi cations are measured at sp ecified test conditions. specifications are not guarantee d over all recommended operating conditions. electrical specifications test conditions unless otherwise noted: 25oc, vc1 = -40/0 v, vc2 = 0/-40 v, see function table at application circuit on page 5 . parameter min typical max units operational frequency range dc 12 ghz control current (ic1/ ic2) -0.65 0.1 ma insertion loss (on-state) < 1 db input return loss ? on-state (common port rl) 15 db output return loss ? on-state (switched port rl) 15 db isolation (off-state) -35 db output return loss ? off-sate (isolated port rl) 3 db input power 1 / 43 dbm insertion loss temperature coefficient -0.003 db/c switching speed - on 31 ns switching speed - off 18 ns 1/ the input power will be reduced if < 10 mhz.
TGS2352 dc ? 12 ghz high power spdt switch specifications (cont.) thermal and reliability information parameter condition rating thermal resistance, jc , measured to back of carrier (die mounted to a 20 mil cumo carrier using 1.5 mil 80/20 ausn) tbase = 70 c jc = 12.6 c/w channel temperature (tch), and median lifetime (tm) tbase = 70 c, vc1 = 0 v, vc2 = -40 v, pin = 20 w, pdiss = 4.15 w tch = 122.3 c tm = 9.2 e+8 hours 1.e+04 1.e+05 1.e+06 1.e+07 1.e+08 1.e+09 1.e+10 1.e+11 1.e+12 1.e+13 1.e+14 1.e+15 25 50 75 100 125 150 175 200 225 250 275 median lifetime, tm (hours) channel temperature, tch (c) median lifetime (tm) vs. channel temperature (tch) fet7 preliminary data sheet: rev a 06/20/11 - 3 of 10 - disclaimer: sub j ect to chan g e without notice ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ?
TGS2352 dc ? 12 ghz high power spdt switch typical performance -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0 0246810121416 insertion loss (db) frequency (ghz) insertion loss (on-state) vs. frequency vc1 = -40 v, vc2 = 0 v, +25 0 c -35 -30 -25 -20 -15 -10 -5 0 0246810121416 on-state return loss (db) frequency (ghz) return loss (on-state) vs. frequency vc1 = -40 v, vc2 = 0 v, +25 0 c irl orl -1.0 -0.8 -0.6 -0.4 -0.2 0.0 0.2 27 29 31 33 35 37 39 41 43 loss compression (db) input power (dbm) loss compression vs. pin vs. frequency vc1 = -40 v, vc2 = 0 v, +25 0 c 7 ghz 8 ghz 9 ghz 10 ghz 11 ghz 12 ghz -7 -6 -5 -4 -3 -2 -1 0 0246810121416 off-state output return loss (dbm) frequency (ghz) return loss (off-state) vs. frequency vc1 = 0 v, vc2 = -40 v, +25 0 c -80 -70 -60 -50 -40 -30 -20 0 2 4 6 8 10 12 14 16 isolation (db) frequency (ghz) isolation (off-state) vs. frequency vc1 = 0 v, vc2 = -40 v, +25 0 c preliminary data sheet: rev a 06/20/11 - 4 of 10 - disclaimer: sub j ect to chan g e without notice ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ?
TGS2352 dc ? 12 ghz high power spdt switch application circuit 1 5 4 2, 7 3, 6 vc2 j1 rf in vc1 j2 rf out1 j3 rf out2 vc1 can be biased from either bond pad 3 or 6, and the non-biased bond pad can be left open. vc2 can be biased from either bond pad 2 or 7, and the non-biased bond pad can be left open. this switch can be configured as a single pole, single throw (spst) by terminating one unused rf out port with a 50 ohm load. bias-up procedure bias-down procedure vc1 set to -40 v (on state for insertion loss) or 0 v (off state for isolation) turn off rf supply vc2 set to 0 v (on state for insertion loss) or -40 v (off state for isolation) turn vc1 to 0v apply rf signal to rf input turn vc2 to 0 v function table rf path state vc1 vc2 rf in to rf out1 (50 ohm load to rf out2) on-state (insertion loss) 0 v -40 v off-state (isolation) -40 v 0 v rf in to rf out2 (50 ohm load to rf out1) on-state (insertion loss) -40 v 0 v off-state (isolation) 0 v -40 v preliminary data sheet: rev a 06/20/11 - 5 of 10 - disclaimer: sub j ect to chan g e without notice ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ?
TGS2352 dc ? 12 ghz high power spdt switch bond pad description 1 2 3 4 5 67 bond pad symbol description 1 rf in input, matched to 50 ohms, dc coupled 2, 7 vc2 control voltage #2; can be biased from either side (bond pad 2 or bond pad 7), and non- biased bond pad can be left opened; see application circuit on page 5 as an example 3, 6 vc1 control voltage #1; can be biased from either side (bond pad 3 or bond pad 6), and non- biased bond pad can be left opened; see application circuit on page 5 as an example 4 rf out1 output #1, matched to 50 ohms, dc coupled 5 rf out2 output #2, matched to 50 ohms, dc coupled preliminary data sheet: rev a 06/20/11 - 6 of 10 - disclaimer: sub j ect to chan g e without notice ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ?
TGS2352 dc ? 12 ghz high power spdt switch assembly drawing rf in rf out2 vc2 vc1 rf out1 preliminary data sheet: rev a 06/20/11 - 7 of 10 - disclaimer: sub j ect to chan g e without notice ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ?
TGS2352 dc ? 12 ghz high power spdt switch mechanical information 0.175 0.0 0.300 0.919 1.150 0.175 0.300 0.919 0.984 0.0 0.177 0.621 0.826 1.031 1.474 1.651 1.475 1.275 0.376 0.176 1 2 3 4 5 67 unit: millimeters thickness: 0.10 die x, y size tolerance: +/- 0.050 chip edge to bond pad dimensions are shown to center of pad ground is backside of die bond pad symbol pad size 1 rf in 0.100 x 0.200 2, 7 vc2 0.100 x 0.100 3, 6 vc1 0.100 x 0.100 4 rf out1 0.200 x 0.100 5 rf out2 0.200 x 0.100 preliminary data sheet: rev a 06/20/11 - 8 of 10 - disclaimer: sub j ect to chan g e without notice ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ?
TGS2352 dc ? 12 ghz high power spdt switch product compliance information esd information esd rating: tbd value: passes tbd v min. test: human body model (hbm) standard: jedec standard jesd22-a114 solderability this part is compliant with eu 2002/95/ec rohs directive (restrictions on the use of certain hazardous substances in electrical and electronic equipment). this product also has the following attributes: ? lead free ? halogen free (chlorine, bromine) ? antimony free ? tbbp-a (c 15 h 12 br 4 0 2 ) free ? pfos free ? svhc free eccn us department of commerce ear99 assembly notes component placement and adhesive attachment assembly notes: ? vacuum pencils and/or vacuum collets are the preferred me thod of pick up. ? air bridges must be av oided during placement. ? the force impact is critical during auto placement. ? organic attachment (i.e. epoxy) can be used in low-power applications. ? curing should be done in a convection oven; proper exhaust is a safety concern. reflow process assembly notes: ? use ausn (80/20) solder and limit exposure to temperatures above 300 c to 3-4 minutes, maximum. ? an alloy station or conveyor furnace with reducing atmosphere should be used. ? do not use any kind of flux. ? coefficient of thermal expansion matching is critical for long-term reliability. ? devices must be stored in a dry nitrogen atmosphere. interconnect process assembly notes: ? thermosonic ball bonding is the preferred interconnect technique. ? force, time, and ultrasonics are critical parameters. ? aluminum wire should not be used. ? devices with small pad sizes should be bonded with 0.0007-inch wire. preliminary data sheet: rev a 06/20/11 - 9 of 10 - disclaimer: sub j ect to chan g e without notice ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ?
TGS2352 dc ? 12 ghz high power spdt switch preliminary data sheet: rev a 06/20/11 - 10 of 10 - disclaimer: sub j ect to chan g e without notice ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ? contact information for the latest specifications, additional product information, worldwide sales and distribution locations, and information abou t triquint: web: www.triquint.com tel: +1.972.994.8465 email: info-sales@tqs.com fax: +1.972.994.8504 for technical questions and application information: email: info-products@tqs.com important notice the information contained herein is believed to be reliable. triquint makes no warranties regarding the information contained herein. triquint assumes no responsibility or liability whatso ever for any of the information contained herein. triquint assumes no responsibility or liability whatsoever for the use of the information contained herein. the information contained herein is provided "as is, where is" and with all faults, and th e entire risk associated with such information is entirely with the user. all information contained herein is subject to change without notice. customers should obtain and verify the latest relevant information before placing orders for triquint products. the information contained herein or any use of such information does not grant, explicitly or implicitly, to any part y any patent rights, licenses, or any other intellectual prope rty rights, whether with regard to such information itself or anything described by such information. triquint products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reason ably be expected to cause severe personal injury or death.
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